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1N5251B NLU2GU04 CX201 2314668 46F49E MB90V 51012 WRB1215
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 TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/528 Devices 2N6032 2N6033 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current Total Power Dissipation
Symbol
VCEO VCBO IC VEBO IB PT Top, Tstg
2N6032
90 120 50
2N6033
120 150 40
Units
Vdc Vdc Adc Vdc Adc W
0
@ TC = +250C (1)
7.0 10 140 -65 to +200 Max. 1.25
Operating & Storage Temperature Range
C
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RJC 1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C Unit 0 C/W
TO-3* (TO-204AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB = 150 Vdc Collector-Emitter Cutoff Current VCE = 110 Vdc, VBE =-1.5 Vdc VCE = 135 Vdc, VBE =-1.5 Vdc 2N6032 2N6033 2N6032 2N6033 2N6032 2N6033 2N6032 2N6033 2N6032 2N6033 V(BR)CEO 90 120 110 140 120 150 25 25 12 10 Vdc
V(BR)CER
Vdc
V(BR)CEX
Vdc
ICBO
mAdc
ICEX
mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N6032, 2N6033, JAN SERIES ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol IEBO ICEO Min. Max. 10 10 Unit mAdc mAdc
OFF CHARACTERISTICS (con't)
Emitter-Base Cutoff Current VEB = 7.0 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio IC = 50 Adc, VCE = 2.6 Vdc IC = 40 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 50 Adc, IB = 5.0 Adc IC = 40 Adc, IB = 4.0 Adc Base-Emitter Saturation Voltage IC = 50 Adc, IB = 5.0 Adc IC = 40 Adc, IB = 4.0 Adc
2N6032 2N6033 2N6032 2N6033 2N6032 2N6033
hFE
10 10
50 50 1.3 1.0 2.0 2.0 Vdc
VCE(sat)
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe Cobo 10 40 1,000 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 Vdc; IC = 50 Adc; IB = 5.0 Adc VCC = 30 Vdc; IC = 40 Adc; IB = 4.0 Adc Turn-Off Time VCC = 30 Vdc2; IC = 50 Adc; IB1 = 5 IB2 = -5 Adc VCC = 30 Vdc2; IC = 40 Adc; IB1 = 4 IB2 = -4 Adc 2N6032 2N6033 2N6032 2N6033
t
on
0.5 0.5 2.0 2.0
s
t
off
s
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 2.8 Vdc, IC = 50 Adc 2N6032 Test 2 VCE = 3.5 Vdc, IC = 40 Adc 2N6033 Test 3 VCE = 24 Vdc, IC = 5.8 Adc All Types Test 4 VCE = 40 Vdc, IC = 0.9 Adc All Types Test 5 VCE = 90 Vdc, IC = 0.18 Adc 2N6032 Test 6 VCE = 120 Vdc, IC = 0.1 Adc 2N6033 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 2 of 2


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